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| APTGF150DU120TG Dual common source NPT IGBT Power Module C1 Q1 G1 C2 VCES = 1200V IC = 150A @ Tc = 80C Application * AC Switches * Switched Mode Power Supplies * Uninterruptible Power Supplies Q2 G2 E1 E2 NT C1 E NTC2 Features * Non Punch Through (NPT) Fast IGBT(R) - Low voltage drop - Low tail current - Switching frequency up to 50 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated * Kelvin emitter for easy drive * Very low stray inductance - Symmetrical design - Lead frames for power connections * Internal thermistor for temperature monitoring * High level of integration Benefits * Outstanding performance at high frequency operation * Stable temperature behavior * Very rugged * Direct mounting to heatsink (isolated package) * Low junction to case thermal resistance * Solderable terminals both for power and signal for easy PCB mounting * Easy paralleling due to positive TC of VCEsat * Low profile * RoHS Compliant Max ratings 1200 200 150 300 20 961 300A @ 1200V Unit V July, 2006 1-5 APTGF150DU120TG - Rev 1 G2 E2 C2 C1 E C2 E1 G1 E2 G2 NTC2 NTC1 Absolute maximum ratings Symbol VCES IC ICM VGE PD RBSOA Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate - Emitter Voltage Maximum Power Dissipation Tc = 25C Tc = 80C Tc = 25C Tc = 25C Tj = 150C A V W Reverse Bias Safe Operating Area These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com APTGF150DU120TG All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics Symbol Characteristic ICES VCE(sat) VGE(th) IGES Zero Gate Voltage Collector Current Collector Emitter saturation Voltage Gate Threshold Voltage Gate - Emitter Leakage Current Test Conditions Tj = 25C VGE = 0V VCE = 1200V Tj = 125C Tj = 25C VGE =15V IC = 150A Tj = 125C VGE = VCE, IC = 5 mA VGE = 20V, VCE = 0V Min Typ Max 350 600 3.7 6.5 500 Unit A V V nA 3.2 3.9 4.5 Dynamic Characteristics Symbol Cies Coes Cres Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Eon Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Test Conditions VGE = 0V VCE = 25V f = 1MHz Inductive Switching (25C) VGE = 15V VBus = 600V IC = 150A R G = 5.6 Inductive Switching (125C) VGE = 15V VBus = 600V IC = 150A R G = 5.6 VGE = 15V Tj = 125C VBus = 600V IC = 150A Tj = 125C R G = 5.6 Test Conditions Tj = 25C Tj = 125C Tc = 80C Tj = 25C Tj = 125C Tj = 25C IF = 100A VR = 600V di/dt =2500A/s Min Typ 10.2 1.4 0.75 120 50 310 20 130 60 360 30 18 Max Unit nF ns ns mJ 8 Reverse diode ratings and characteristics Symbol Characteristic VRRM IRM IF VF trr Qrr Er Maximum Peak Repetitive Reverse Voltage Min 1200 Typ Max 500 750 Unit V A A V ns C mJ July, 2006 2-5 APTGF150DU120TG - Rev 1 Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Energy VR=1200V IF = 100A 100 2.1 1.9 95 190 8.4 18 3 6 Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C www.microsemi.com APTGF150DU120TG Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information). Symbol Characteristic R25 Resistance @ 25C B 25/85 T25 = 298.15 K Min Typ 50 3952 Max Unit k K RT = R 25 1 1 RT : Thermistor value at T exp B 25 / 85 T - T 25 T: Thermistor temperature Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Thermal and package characteristics Junction to Case Thermal Resistance Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight IGBT Diode Min Typ Max 0.13 0.32 150 125 100 4.7 160 Unit C/W V C N.m g RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz To heatsink M5 2500 -40 -40 -40 2.5 SP4 Package outline (dimensions in mm) See application note APT0501 - Mounting Instructions for SP4 Power Modules on www.microsemi.com www.microsemi.com 3-5 APTGF150DU120TG - Rev 1 ALL DIMENSIO NS MARKED " * " ARE T OLERENCED AS : July, 2006 APTGF150DU120TG Typical Performance Curve Output Characteristics (VGE=15V) Output Characteristics 300 250 TJ=25C TJ = 125C VGE =20V VGE=12V V GE=15V 300 250 IC (A) 200 IC (A) 200 150 100 T J=125C VGE =9V 150 100 50 0 0 1 2 3 V CE (V) 4 5 6 50 0 0 1 2 3 4 VCE (V) 5 6 Transfert Characteristics 300 250 200 E (mJ) IC (A) 150 100 50 0 5 6 7 8 9 10 11 12 VGE (V) Switching Energy Losses vs Gate Resistance 70 60 50 E (mJ) 40 30 20 10 0 0 5 10 15 20 25 30 35 40 45 50 Gate Resistance (ohms) Eoff Er VCE = 600V VGE =15V IC = 150A T J = 125C T J=25C TJ=125C Energy losses vs Collector Current 56 48 40 32 24 16 8 0 0 50 100 150 IC (A) Reverse Bias Safe Operating Area 350 300 Eon Er Eoff Er VCE = 600V VGE = 15V RG = 5.6 TJ = 125C Eon 200 250 300 250 IC (A) 200 150 100 50 0 0 300 600 900 1200 1500 VCE (V) VGE=15V T J=125C RG=5.6 maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.14 Thermal Impedance (C/W) 0.12 0.1 0.08 0.06 0.04 0.02 0 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) 0.1 0.05 Single Pulse 0.9 0.7 0.5 0.3 IGBT www.microsemi.com 4-5 APTGF150DU120TG - Rev 1 July, 2006 APTGF150DU120TG Operating Frequency vs Collector Current Fmax, Operating Frequency (kHz) 90 80 70 60 50 40 30 20 10 0 0 40 80 120 IC (A) 160 200 0 0 0.5 1 1.5 V F (V) 2 2.5 3 hard switching ZCS ZVS VCE=600V D=50% RG=5.6 T J=125C T C=75C Forward Characteristic of diode 250 200 150 100 50 TJ=25C maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.35 Thermal Impedance (C/W) 0.3 0.25 0.2 0.15 0.1 0.05 0.1 0.05 0.0001 0.001 Single Pulse 0.01 0.1 1 10 0.9 0.7 0.5 0.3 Diode 0 0.00001 rectangular Pulse Duration (Seconds) IF (A) TJ=125C Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 5-5 APTGF150DU120TG - Rev 1 Microsemi reserves the right to change, without notice, the specifications and information contained herein July, 2006 |
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